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| PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 FEB 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt FXT749 B C E REFER TO ZTX749 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -35 -25 -5 -6 -2 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -35 -25 -5 -0.1 -10 -0.1 -0.12 -0.23 -0.9 -0.8 70 100 75 15 100 200 200 150 50 160 100 -0.3 -0.5 -1.25 -1 300 MHz pF TYP. MAX. UNIT V V V A A A CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-30V VCB=-30V,T amb =100C VEB=-4V, IE=0 IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-56 |
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